Atlas Device Simulation Framework

Atlas provides a physics-based, easy to use, modular, and extensible platform to analyze DC, AC, and time domain responses for all semiconductor based technologies in 2 and 3 dimensions.

Key Features

• Accurately characterize physics-based devices in 2D or 3D for electrical, optical, and thermal performance without costly split-lot experiments
• Solve yield and process variation problems for optimal combination of speed, power, density, breakdown, leakage, luminosity, or reliability
• Choose from the largest selection of silicon, III-V, II-VI, IV-IV, or polymer/organic technologies including CMOS, bipolar, high voltage power device, VCSEL, TFT, optoelectronic, LASER, LED, CCD, sensor, fuse, NVM, ferro-electric, SOI, Fin-FET, HEMT, and HBT

S-Pisces, 2D Silicon Device Simulator

S-Piscesis an advanced 2D device simulator for silicon based technologies that incorporates both drift-diffusion and energy balance transport equations. A large selection of physical models are available which include surface/bulk mobility, recombination, impact ionization and tunneling models. Typical applications include MOS, bipolar, and BiCMOS technologies. The capabilities of all the physical models have been extended to deep submicron devices, SOI devices, and non-volatile memory structures.

All measurable electrical parameters can be calculated. For MOS technologies these include gate and drain characteristics, subthreshold leakage, substrate currents, and punchthrough voltage. For bipolar technologies Gummel plots and saturation curves can be predicted. Other important characteristics that can be calculated include breakdown behavior, kink and snapback effects, CMOS latchup, guarding breakdown voltage, low-temperature and high-temperature operation, AC parameters, and intrinsic switching times.

Blaze, 2D Device Simulator for Advanced Materials

Blazesimulates devices fabricated using advanced materials. It includes a library of binary, ternary and quaternary semiconductors. Blaze has built-in models for graded and abrupt heterojunctions, and simulates binary structures such as MESFETS, HEMTs and HBTs.

All measurable DC, AC and transient device characteristics can be simulated. Calculated DC characteristics include threshold voltage, gain, leakage, punchthrough voltage and breakdown behavior. Calculated RF characteristics include cut-off frequency, s-, y-, h- and z-parameters, maximum available gain, maximum stable gain, maximum frequency of oscillation and stability factor. Intrinsic switching times and Fourier analysis of periodic large-signal outputs can also be calculated.

Giga, Non-Isothermal Device Simulator

Gigacombined with S-PiscesBlaze device simulators allows simulation of self heating effects. Models in Giga include heat generation, heat flow, lattice heating, heat sinks, and effects of local temperature on physical constants. Thermal and electrical physical effects are coupled through self-consistent calculations. Giga is a fully integrated component of the Atlas device simulation framework.

Giga provides an ideal environment for the design and optimization of power devices fabricated using MOS, bipolar, and mixed MOS-bipolar technologies. Other common applications include characterization of electrostatic discharge (ESD) protection, device design of HBT, HEMT and SOI devices, thermal failure analysis, and heat sink designs.

MixedMode, Circuit Simulation for Advanced 2D Devices

MixedModeis a circuit simulator that includes physically-based devices in addition to compact analytical models. Physically-based devices are used when accurate compact models do not exist, or when devices that play a critical role must be simulated with very high accuracy. The physically-based devices may be simulated using any combination of Atlas 2D modules. The physically-based devices are placed along side a circuit description that conforms to SPICE netlist format. The applications of MixedMode include power circuits, high performance digital circuits, precision analog circuits, high-frequency circuits, thin film transistor circuits, and optoelectronic circuits.

Quantum, 2D Simulation Models for Quantum Mechanical Effects

Quantum provides a set of models for simulation of various effects of quantum confinement and quantum transport of carriers in semiconductor devices. A self consistent Schrodinger – Poisson solver allows calculation of bound state energies and associated carrier wave functions self consistently with electrostatic potential. Schrodinger solvers can be combined with Non-equilibrium Green’s Function (NEGF) Approach in order to model ballistic quantum transport in 2D or cylindrical devices with strong transverse confinement. 

Luminous, 2D Optoelectronics Device Simulator

Luminousis an advanced device simulator specially designed to model light absorption and photogeneration in non-planar semiconductor devices. Exact solutions for general optical sources are obtained using geometric ray tracing. This feature enables Luminous to account for arbitrary topologies, internal and external reflections and refractions, polarization dependencies and dispersion. Luminous also allows optical transfer matrix method analysis for coherence effects in layered devices. The beam propagation method may be used to simulate coherence effects and diffraction. Luminous is fully integrated within Atlas with a seamless link to S-PiscesBlaze device simulators, and other Atlas device technology modules. Luminous can simulate mono-chromatic or multi-spectral optical sources, and provides special parameter extraction capabilities unique to optoelectronics. DC, AC, transient, and spectral optical responses of general device structures can be simulated in the presence of arbitrary optical sources. Luminous is applicable to a wide array of device technologies including CCDs, solar cells, photodiodes, photoconductors, avalanche photodiodes, MSM photodetectors, phototransistors, and optoelectronic imaging arrays and many more.

TFT, 2D Amorphous and Polycrystalline Device Simulator

TFTis an advanced device technology simulator equipped with the physical models and specialized numerical techniques required to simulate amorphous or polysilicon devices including thin film transistors. Specialized applications include the large area display electronics such as Flat Panel Displays (FPDs) and solar cells. TFT models the electrical effects of the distribution of defect states in the band gap of non-crystalline materials. Users can specify the Density Of States (DOS) as a function of energy for amorphous silicon and polysilicon for grain and grain boundaries as well as the capture cross-sections/lifetimes for electrons and holes. Models for mobility, impact ionization and band-to band tunneling can be modified by users to accurately predict device performance. 

Organic Display, OLED and OTFT Organic Display Simulator

The Organic Displaymodule enables Atlas to simulate the electrical and optical properties of organic display devices such as OTFTs and OLEDs. Organic Display is integrated into the Atlas framework and allows the steady-state and transient simulation of the electrical and optical behavior of active organic devices including the singlet and triplet exciton densities, dopant exciton density and optical emission characteristics.

Organic Solar, Organic Solar Cell and Photodetector Simulator

TheOrganic Solarmodule enables Atlas to simulate the electrical and optical properties of organic solar cell devices, photodetectors and image sensors. Organic Solar is integrated into the Atlas framework and allows the steady-state, transient and AC simulation of the electrical and optical behavior of photovoltaic organic devices. The exciton densities, diffusion, generation/recombination and dissociation characteristics can all be simulated.